Sc/Si multilayer mirrors designed at different wavelengths in the spectral range from λ = 36 to 50 nm S. Yulin Multilayer optics for EUV and beyond et al., “Enhanced reflectivity and stability of Sc/Si multilayers”, SPIE 5193, 2004

We provide EUV mirrors that reflect EUV light with photon energy 10 eV - 1 keV (wavelength 120 nm - 1.2 nm) with high efficiency. This energy band mirror, also called soft X-ray or XUV light, is used in a wide range of fields such as industrial applications such as EUV lithography, ultra-high-speed physical and chemical research using high ...

• Transition from Mo/Si to Nb/X/Si/X, Ru/X/Si/X …. multilayer mirrors • Application of new promising diffusion materials • Application of new oxidation resistant capping layers

EUV Reflectometry Facility at NIST Sample Chamber • Samples up to 45 cm diameter, 40 kg mass. • Six axes sample motion, three axes detector motion. • UV spot size: 1mm x 1mm (FWHM) • Can be fitted with external end-stations for assembled instrument calibration. Monochromator • VLS grating: – 600 mm-1, 7 nm - 35 nm

2021年8月15日 · Broadband reflection is a basic need in extreme ultraviolet (EUV) optics, especially for the control of a broadband source such as attosecond pulse. In this paper, we propose a design method of broadband EUV multilayer mirrors based on genetic algorithm with a two-parametric merit function.

"We make molybdenum and silicon multilayer mirrors that are capable of reflecting over 60 percent of 13.5-nanometer EUV," says Underwood. "Recently we've gotten up to 68 percent." An area of great practical promise for multilayer mirrors lies in microlithography for the computer chips of the future.

2009年2月26日 · Extreme ultraviolet (EUV) lithography is likely to be the next-generation lithography technology for 22 nm resolution and beyond, promising competitive cost of ownership if high source power can be provided to enable high stage-scanning speed and high throughput.

2019年3月26日 · In this work, we demonstrate a method to design the Mo-Si multilayer stack of an EUV photomask to increase the optical efficiency of shadowing-orientation equal lines and spaces imaged under dipole illumination.

2006年4月1日 · These new multilayer mirrors consist of molybdenum and silicon layers separated by different interdiffusion barriers (X = C and SiC). The Mo/C/Si/C interface-engineered mirrors were optimized in terms of high peak reflectivity at a wavelength near 13.5 nm (Rp ⩾ 60.0%) and broad operating temperature range (T = 20–500 °C).

2013年11月27日 · We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that provides selective suppression for infrared (IR) radiation. The mirror consists of an IR-transparent LaN∕B multilayer stack which is used as EUV-reflective coating and antireflective (AR) coating to suppress IR.