Novel Deep Trench Buried-Body-Contact (DBBC) has been successfully developed for 4F2 DRAM cells on sub-30nm technology node. The critical requirements of therma

2012年11月12日 · Novel Deep Trench Buried-Body-Contact (DBBC) has been successfully developed for 4F2 DRAM cells on sub-30nm technology node by using an ultra thin Ti silicide ohmic layer and PLAD technique, which show excellent electrical performance and process feasibility for the development of 4F1 DRAM cell on the 30nm node and beyond.

Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology. 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC). doi:10.1109/essderc.2012.6343366

Abstract: Novel Deep Trench Buried-Body-Contact (DBBC) has been successfully developed for 4F 2 DRAM cells on sub-30nm technology node.

Each slanted active area in DRAM as shown in Figure 4706a has two storage-node contacts (SNC) and one BL-contact. For the slanted active areas, SNCs and BL-contacts are automatically staggered in the BL direction, which implies that in any given BL direction either a row of SNC exists or a row of BL-contacts is found – but not both.

Reorganizing the DRAM cell layout from 6F2 to a 4F2 layout is an option for scaling, though likely difficult to achieve. 4F 2 scaling may possible to implement for sub-20 nm nodes by using a capacitorless 1T DRAM cell architecture.

2012年12月18日 · Korean memory maker Hynix recently introduced its 30-nm class (3X) DRAM. UBM TechInsights performed a complete structural analysis of the low power, 2-Gbit DDR3 SDRAM H5TC2G83CFR-H9R. Surprisingly, the wordline (WL) pitch measured in the bitline (BL) direction was found to be the same as in the previous generation Hynix 44 …

Novel Deep Trench Buried-Body-Contact (DBBC) has been successfully developed for 4F2 DRAM cells on sub-30nm technology node.

DRAM cell scaling down to sub-15 nm design rule (D/R) has already been productized from major DRAM players such as Samsung, Micron, and SK Hynix. They’ve been developing n+1 and n+2 generations so called 1b (or 1β) and 1c (or 1γ), which means DRAM cell D/R might be able to further scale down to sub-12 nm or beyond with/without EUV adoption

2012年9月1日 · The critical requirements of thermal stability, shallow junction depth, and conformal source-drain doping profile for the contact are achieved by using an ultra thin Ti silicide ohmic layer and...