If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through the channel; similarly, the drain is where the charge carriers leave the channel.

2018年7月5日 · MOS管学名场效应管，简称金氧半场效晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)是一种可以广泛使用在模拟电路与数字电路的场效晶体管(field-effect transistor)。MOSFET依照其“通道”(工作载流子)的极性不同，可分为“N型”与“P型” 的两种类型，通 …

2019年7月10日 · Drain-Source Breakdown Voltage: 漏源击穿电压，漏极与源极之间的最大电压，超过此电压可能会导致器件损坏。对于PNP，基极有电流流入（基极从右到左的电流，由集电极提供），整个三极管会出现如红色箭头所示的电流。

2021年4月19日 · MOSFET是具有源极（Source），栅极（Gate），漏极（Drain）和主体（Body）端子的四端子设备。 通常，MOSFET的主体与源极端子连接，从而形成诸如场效应晶体管的三端子器件。

MOS管是金属（metal）—氧化物（oxide）—半导体（semiconductor）场效应晶体管，或者称是金属—绝缘体（insulator）—半导体。MOS管的source和drain是可以对调的，他们都是在P型backgate中形成的N型区。在多数情…

2022年5月15日 · MOSFET 的三端标记分别为 G, S, D (Gate, Source, Drain), 电路符号有多种形式, 最常见的如下图所示, 以一条垂直线代表沟道 (Channel), 两条和沟道平行的接线代表源极 (Source)与漏极 (Drain), 左方和沟道垂直的接线代表栅极 (Gate). 有时也会将代表沟道的直线以虚线代替, 以区分增强型 (enhancement mode)MOSFET 或是耗尽型 (depletion mode)MOSFET. MOSFET 和三极管的区别在于, MOSFET 主要不是用于放大信号, 而是用来控制电路通断.

• Current goes from drain to source while Vgs < Vt – Tox is scaled which can cause reliability problems • Can’t handle large Vg without hot electron effects

• Drain-Source Voltage (V DS): controls the electric field that drifts the inversion charge from the source to drain Want to understand the relationship between the drain current in the MOSFET as a function of gate-to-source voltage and drain-to-source voltage. Initially consider source tied up to body (substrate or back) depletion region ...

2023年11月1日 · In this article, we’ll introduce the physical implementation of MOSFETs and their theory of operation. An MOS transistor is a four-terminal device consisting of a gate (G), drain (D), source (S), and body (B). Figure 1 illustrates the two types of MOS transistor: the N-channel MOSFET (NMOS) and the P-channel MOSFET (PMOS).

The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage. Because of this high input impedance and gain, MOSFETs can be easily damaged by static electricity if not ...