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As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...

Extending the application range of GaN power devices to higher voltage and power may necessitate the use of the favored vertical geometry. As the voltage range of the device is increased, the drift ...

One charger to rule them all. This six-port GaN powerhouse delivers 200W of fast charging for all your devices — and it’s 31% ...

SAVE $20: As of Feb. 7, the Anker 735 65W GaN charger is available at Best Buy for $19.99 (regularly $39.99). That’s 50% off ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

Navitas Semiconductor has announced the adoption of its GaNFast and GeneSiC power technologies into Dell's family of notebook adapters, from 60W to 360W.

Gallium Nitride (GaN) power devices are becoming increasingly important in the field of power electronics due to their ability to operate at high voltages and efficiencies. Recent research has ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...