近期，长鑫存储技术有限公司申请的名为“CMOS器件及其形成方法”的专利引发了行业的广泛关注。这项专利的公开号为CN119364851A，申请日期为2023年7月，旨在提高CMOS器件的集成度。随着现代电子设备对性能和空间的不断追求，CMOS（互补金属 ...

如果您希望可以时常见面，欢迎标星收藏哦 ~ 对电子元件三维 ( 3D ) 集成的需求正在稳步增长。尽管存在巨大的加工挑战，硅通孔 ( TSV ) 技术仍是集成 3D 格式单晶器件元件的唯一可行方法。尽管单片 3D ( M3D：monolithic ...

Moreover, the LDD optimization significantly reduced off-state leakage current (Ioff) for both NMOS and PMOS due to the reductions of peak electric field ... to S/D doping engineering may achieve ...

It says something about your career at a company that makes hundreds of trillions of transistors every day when your nickname ...

Mostly-Analog editor Andy Turudic takes a look at the original 1963 ISSCC paper that described the world’s first CMOS process with planar P- and N-type MOSFETs. The first CMOS chip was created ...

This macro-cell is an ultra low power general purpose current bias generator core designed for SilTerra 0.18µm CL180G CMOS technology. The circuit generates 7 × NMOS 15.5nA current branches and 1 × ...

Some key computer functions are governed by the CMOS (Complementary Metal-Oxide-Semiconductor), a chip on your motherboard powered by a small battery. The CMOS governs things like the system time ...

This repository contains the design, simulation, and analysis of a CMOS Inverter using industry-standard tools like Cadence Virtuoso. The project focuses on understanding and optimizing the ...

Because of the synergy between N-type and P-type materials, CMOS logical systems are frequently more energy efficient than purely NMOS or PMOS logic. Semiconductors rely on quantum effects such as ...

随着英特尔迈向又一次重大变革——从 FinFET 转向 RibbonFET（更通俗的说法是纳米片晶体管）—— IEEE Spectrum向 Ghani 询问迄今为止最危险的变革是什么。在这个设备整个架构都发生改变的时代，他的回答有些令人惊讶，那就是早在 2008 年就引入的一项变革，从外观上看，晶体管与以前非常相似。