Abstract: In this paper, a comprehensive TCAD-based single event effect (SEE) study on tunnel field effect transistor (TFET) based one transistor dynamic random access memory (1T DRAM) and crossbar ...

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Additionally, the use of feedback field-effect transistors (FBFETs) in 1T-DRAM arrays has shown promise in addressing scaling challenges. These devices exhibited reliable operation with low energy ...

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Our creative brief, commissioning contacts and the support we offer companies and writers We are the home of UK drama, a world-renowned brand producing a vast array of distinctive, high-quality ...

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Samsung's delayed 1c DRAM development could disrupt its broader plans to regain a foothold in the HBM market, raising concerns about its long-term competitiveness. Samsung had reportedly planned ...