For high-volume production, the inspection of the blanks and the review of mask pattern defects must be done with the same wavelength of light used to expose the pattern. Unique EUV mask defect ...

Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected ... the production and inspection of the masks defining the features to be etched, and the output power of the light source.

From a mask blank perspective, you need better optics for actinic mask blank inspection. The wavelength doesn’t change, but you need better optics and you will likely need a better stage for ...

As EUV lithography revolutionizes the semiconductor manufacturing industry, CNT membranes are the ideal choice for protecting the photomask from contamination during the mask inspection and EUV ...

When will EUV and full-chip ILT happen? Yamada: The general trends in both optical OPC/ILT ... This program is based on our experience with electron-beam lithography, optical mask inspection and ...

Dai Nippon Printing Co., Ltd. (DNP, TOKYO: 7912) has successfully achieved the fine pattern resolution required for photomasks for logic semiconductors of the beyond 2nm (nm: 10-9 meter ...